Ruttonsha International Rectifier Ltd. SILICON CONTROLLED RECTIFIERS RUTTONSHA High Power Thyristor Hockey Puk Version K-PUK Series 1700PK Types : 1700PK 20 to 1700PK 160 1700 PK (K - PUK ) FEATURES v Center amplifying gate. v Metal case with ceramic insulator v International standard case A-24. v High profile hockey - puk. TYPICAL APPLICATIONS v DC motor control (e.g. for machine tools). v Controlled rectifiers (e.g. for battery charging, Uninterrupted Power Supply). v AC controllers (e.g. for temperature control, lights control). MAJOR RATINGS & CHARACTERISTICS Parameters I T(AV) @ T hs I T(RMS) 1700PK Units 1745 A 55 3200 @ T hs 25 0 C A 0 C I TSM @ 50 Hz 33500 A I 2t @ 50 Hz 5615 KA 2s 200 to 1600 V 200 s V DRM / VRRM tq TJ typical -40 to 125 0 C All dimension in millimeters SILICON CONTROLLED RECTIFIERS 1700PK ELECTRICAL SPECIFICATION VOLTAGE RATINGS Type Number 1700PK Voltage Code V RRM / V DRM, max. repetitive peak and off-state voltage V V RSM, max. non-repetitive peak voltage V 20 200 300 40 400 500 60 600 700 80 800 900 100 1000 1100 120 1200 1300 140 1400 1500 160 1600 1700 I DRM / I RRM max. @ 125 0C mA 100 ON-STATE CONDUCTION Parameter I T(AV) Max. average on-state current @ heat sink temperature 1700PK 1745(710) 55(85) I T(RMS) Max. RMS on-state current 3200 I TSM Max. peak one cycle non-repetitive surge current 33500 28200 I 2t Maximum I 2t for fusing 2 t Maximum I 2t for fusing 56150 V T(TO)1 Low level value of threshold voltage 0.93 V T(TO)2 High level value of threshold voltage 1.02 r t1 Low level value of on state slope resistance 0.17 r t2 High level value of on state slope resistance 0.16 V TM Max. on state voltage 1.62 IH Maximum holding current 600 IL Latching current 1000 Conditions A 180 0 conduction, half sine wave C double side (single side) cooled 0 @25 0C heat sink temperature (double side cooled) A 5615 3971 I Units kA 2s k A 2s V m t = 10ms No voltage reapplied t = 10ms 100%V RRM reapplied t = 10ms No voltage reapplied t = 10ms 100%V RRM reapplied Sinusodial half wave, Initial T J = T J max. t = 0.1 to 10ms. No voltage reapplied. (16.7% x x I F(AV) < I < x I F(AV) ), T J = T J max. ( x I F(AV) < I < 20 x x I F(AV) ), T J = T J max. (16.7% x x I F(AV) < < x I F(AV) ), T J = T J max. ( x I F(AV) < I < 20 x x I F(AV) ) T J = T J max. V mA I pk = 4000A, T J = T J max., t p = 10ms sine pulse T J = 25 0C, anode supply 12V resistive load SWITCHING Parameter di/dt Max. non-repetitive rate of rise of turned-on current 1700PK Units Conditions 1000 A/s Gate drive 20V, 20, tr 1 s T J = T J max., anode voltage 80% V DRM td Typical delay time 1.9 tq Typical turn-off time 200 s Gate current 1A, di g/dt = 1A/s V d = 0.67% V DRM, T J = 25 0C I TM = 550A, T J = T J max., di/dt = 40A/s, V R = 50V dv/dt = 20V/s, Gate 0V 100, t p = 500s SILICON CONTROLLED RECTIFIERS 1700PK BLOCKING Parameter 1700PE Units Conditions dv/dt Maximum critical rate of rise of off-state voltage 500 V/s T J = T J max., linear to 80% rated V DRM I RRM I DRM Max. peak reverse and off-state leakage current 100 mA T J = T J max., rated V DRM /V RRM applied 1700PK Units TRIGGERING Parameter P GM Maximum peak gate power P G(AV) Maximum average gate power 2.0 I GM Max. peak positive gate current 3.0 +V GM Max. peak positive gate voltage 20 -V GM Max. peak negative gate voltage 5.0 I GT DC gate current required to trigger V GT DC gate voltage required to trigger I GD DC gate current not to trigger V GD DC gate voltage not to trigger 16.0 W Conditions T J = T J max., t p 5ms T J = T J max., f= 50Hz, d% = 50 A T J = T J max., t p 5ms V T J = T J max., t p 5ms TYP. MAX. 200 100 50 -200 -- mA T J = -40 0C T J = 25 0C T J = 125 0C 1.4 1.1 0.9 -3.0 -- V T J = -40 0C T J = 25 0C T J = 125 0C 10 mA 0.25 V 1700PK Units T J = T J max. Max. required gate trigger/current / voltage are the lowest value which will trigger all units 12V anode-to-cathode applied. Max. gate current / voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied. THERMAL AND MECHANICAL SPECIFICATION Parameter TJ Max. operating temperature range -40 to 125 T stg Max. storage temperature range -40 to 150 R thJ-hs Max. thermal resistance, junction to heat sink 0.042 F Mounting force, 10% 24500 (2500) N (kg) wt Approximate weight 425 g Case style 0 C K/W 0.021 A-24 Conditions DC operation single side cooled DC operation double side cooled See outline SILICON CONTROLLED RECTIFIERS SILICON CONTROLLED RECTIFIERS SILICON CONTROLLED RECTIFIERS Last Update : July 2000