High Power Thyristor
Hockey Puk Version
K-PUK Series 1700PK
Types : 1700PK 20 to 1700PK 160
FEATURES
vCenter amplifying gate.
vMetal case with ceramic insulator
vInternational standard case A-24.
vHigh profile hockey - puk.
TYPICAL APPLICATIONS
vDC motor control (e.g. for machine tools).
vControlled rectifiers (e.g. for battery charging,
Uninterrupted Power Supply).
vAC controllers (e.g. for temperature control,
lights control).
MAJOR RATINGS & CHARACTERISTICS
Parameters 1700PK Units
IT(AV) 1745 A
@ Ths 55 0C
IT(RMS) 3200 A
@ Ths 25 0C
I2t@ 50 Hz 5615 KA2s
tqtypical 200 µs
ITSM @ 50 Hz 33500 A
VDRM / VRRM 200 to 1600 V
TJ-40 to 125 0C
1700 PK (K - PUK )
All dimension in millimeters
Ruttonsha International Rectifier Ltd.
SILICON CONTROLLED RECTIFIERS
RUTTONSHA
1700PK
ELECTRICAL SPECIFICATION
VOLTAGE RATINGS
Type Number Voltage
Code
VRRM / VDRM, max. repetitive peak
and off-state voltage
V
VRSM, max. non-repetitive
peak voltage
V
IDRM / IRRM max.
@ 1250C
mA
20 200 300
40 400 500
60 600 700
80 800 900
1700PK 100 1000 1100 100
120 1200 1300
140 1400 1500
160 1600 1700
ON-STATE CONDUCTION
Parameter 1700PK Units Conditions
IT(RMS) Max. RMS on-state current 3200 @250C heat sink temperature (double side cooled)
@ heat sink temperature 55(85) 0Cdouble side (single side) cooled
IT(AV) Max. average on-state current 1745(710) A1800 conduction, half sine wave
ITSM Max. peak one cycle 33500 t = 10ms No voltage
non-repetitive surge current Areapplied
28200 t = 10ms 100%VRRM
reapplied Sinusodial half wave,
I2tMaximum I2t for fusing 5615 t = 10ms No voltage Initial TJ = TJ max.
kA2sreapplied
3971 t = 10ms 100%VRRM
reapplied
I2tMaximum I2t for fusing 56150 kA2st = 0.1 to 10ms. No voltage reapplied.
VT(TO)1 Low level value of threshold voltage 0.93 V(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
VT(TO)2 High level value of threshold voltage 1.02 (π x IF(AV) < I < 20 x π x IF(AV)), TJ = TJ max.
rt2 High level value of on state
slope resistance 0.16 (π x IF(AV) < I < 20 x π x IF(AV)) TJ = TJ max.
IHMaximum holding current 600 mA TJ = 250C, anode supply 12V resistive load
VTM Max. on state voltage 1.62 VIpk = 4000A, TJ = TJ max., tp = 10ms sine pulse
ILLatching current 1000
rt1 Low level value of on state
slope resistance 0.17 mΩ(16.7% x π x IF(AV) < Ι < π x IF(AV)), TJ = TJ max.
SWITCHING
Parameter 1700PK Units Conditions
di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, tr ≤ 1 µs
of turned-on current 1000 A/µsTJ = TJ max., anode voltage ≤ 80% VDRM
Gate current 1A, dig/dt = 1A/µs
tdTypical delay time 1.9 µsVd = 0.67% VDRM, TJ = 250C
ITM = 550A, TJ = TJ max., di/dt = 40A/µs, VR = 50V
tqTypical turn-off time 200 dv/dt = 20V/µs, Gate 0V 100Ω, tp = 500µs
SILICON CONTROLLED RECTIFIERS
1700PK
BLOCKING
Parameter 1700PE Units Conditions
dv/dt Maximum critical rate of rise of
off-state voltage 500 V/µsTJ = TJ max., linear to 80% rated VDRM
IRRM Max. peak reverse and off-state
IDRM leakage current 100 mA TJ = TJ max., rated VDRM /VRRM applied
TRIGGERING
Parameter 1700PK Units Conditions
-VGM Max. peak negative gate voltage 5.0 VTJ = TJ max., tp ≤ 5ms
PGM Maximum peak gate power 16.0 WTJ = TJ max., tp ≤ 5ms
PG(AV) Maximum average gate power 2.0 TJ = TJ max., f= 50Hz, d% = 50
IGM Max. peak positive gate current 3.0 ATJ = TJ max., tp ≤ 5ms
+VGM Max. peak positive gate voltage 20
TYP. MAX.
IGT DC gate current required to trigger 200 -- TJ = -400C
100 200 mA TJ = 250C
50 -- TJ = 1250C
VGD DC gate voltage not to trigger 0.25 VTJ = TJ max.
IGD DC gate current not to trigger 10 mA
Max. required gate trigger/current / voltage
are the lowest value which will trigger all
units 12V anode-to-cathode applied.
Max. gate current / voltage not to trigger is
the max. value which will not trigger any unit
with rated VDRM anode-to-cathode applied.
VGT DC gate voltage required to trigger 1.4 --TJ = -400C
1.1 3.0 VTJ = 250C
0.9 -- TJ = 1250C
THERMAL AND MECHANICAL SPECIFICATION
Parameter 1700PK Units Conditions
TJMax. operating temperature range -40 to 125 0C
Tstg Max. storage temperature range -40 to 150
RthJ-hs Max. thermal resistance, junction 0.042 K/W DC operation single side cooled
to heat sink 0.021 DC operation double side cooled
FMounting force, ±10% 24500 N
(2500) (kg)
wt Approximate weight 425 g
Case style A-24 See outline
SILICON CONTROLLED RECTIFIERS
SILICON CONTROLLED RECTIFIERS
SILICON CONTROLLED RECTIFIERS
SILICON CONTROLLED RECTIFIERS
Last Update : July 2000
