UV ENHANCED SERIES INVERSION LAYERS AND PLANAR DIFFUSED SILICON PHOTODIODES APPLICATIONS FEATURES * Pollution Monitoring * Medical Instrumentation * UV Exposure Meters * Spectroscopy * Water Purification * Fluorescence UDT Sensors offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. Both families of devices are especially designed for low noise detection in the UV region of electromagnetic spectrum. Inversion layer structure UV enhanced photodiodes exhibit 100% internal quantum efficiency and are well suited for low intensity light measurements. They have high shunt resistance, low noise and high breakdown voltages. The response uniformity across the surface and quantum efficiency improves with 5 to 10 volts applied reverse bias. In photovoltaic mode (unbiased), the capacitance is higher than diffused devices but decreases rapidly with an applied reverse bias. Photocurrent non-linearity sets in at lower photocurrents for inversion layer devices compared to the diffused ones. They represent highly stable responsivity under temperature changes up to 700 nm. Planar diffused structure UV enhanced photodiodes show significant advantages over inversion layer devices, such as lower capacitance and higher response time. These devices exhibit linearity of photocurrent up to higher light They have relatively lower responsivities and quantum efficiencies compared to inversion layer devices. There are two types of planar diffused UV enhanced photodiodes available: UVD and UVE. Both series have almost similar electro-optical characteristics, except in the UVE series, where the near IR responses of the devices are suppressed. This is especially desirable if blocking the near IR region of the spectrum is necessary. UVD devices peak at 970 nm and UVE devices at 720 nm (see graph). Both series may be biased for lower capacitance, faster response and wider dynamic range. Or they may be operated in the photovoltaic (unbiased) mode for applications requiring low drift with temperature variations. The UVE devices have a higher shunt resistance than their counterparts of UVD devices, but have a higher capacitance. These detectors are ideal for coupling to an OP-AMP in the current mode configuration as shown below. R1 Rf R2 + 15V A2 A1 R0 0.1F - 0.1F + 0.1F + 100% Internal QE * Ultra High RSH * Planar Diffused Series: IR Suppressed High Speed Response High Stability * Excellent UV response input power compared to inversion layer devices. Cf + 15V * Inversion series: Vout 0.1F - 15V - 15V For further details, refer to the "Photodiode Characteristics" section of the catalog. 1 UDT Sensors Inc. Phone: 310-978-0516 Fax: 310-644-1727 http:\\www.udt.com INVERSION LAYER UV ENHANCED PHOTODIODES Active Area Responsivity (A/W) Capaci -tance (pF) Shunt Resistance (M W ) 254 nm 0V -10 mV 2 Dimension (mm) Area (mm ) Model No. TYPICAL ELECTRO-OPTICAL SPECIFICATIONS AT TA=23OC min typ typ min NEP (W/ O Hz) Reverse Voltage (V) 0V 254 nm typ typ Rise Time ( m s) Operating Current (mA) 0V 254 nm 50 W 0V typ max max Temp Range ( C) Operating Package Style Storage UV ENHANCED SERIES, METAL PACKAGE UV-001 0.8 1.0 f 60 250 500 6.4 e -14 0.2 UV-005 5.1 2.54 f 300 80 200 1.0 e -13 0.9 UV-015 15 3.05 x 3.81 800 30 100 1.4 e -13 2.0 UV-20 20 5.08 f 1000 25 50 2.0 e -13 2.0 5 / TO-5 -20 ~ +60 -55 ~ +80 6 / TO-8 UV-35 35 6.60 x 5.33 .09 1600 .14 20 30 1.7 e -13 3.0 5 0.1 11 / BNC UV-50 7.87 f 50 UV-50L * 2500 10 20 2.6 e -13 3.5 10 / LoProf -10 ~ +60 -20 ~ +70 11 / BNC UV-100 11.28 f 100 UV-100L 4500 5 10 4.5 e -13 5.9 10 / LoProf UV ENHANCED SERIES, PLASTIC PACKAGE FIL-UV005 5.1 2.54 f 300 50 100 9.2 e -14 0.9 FIL-UV20 20 5.08 f 1000 20 50 1.3 e -13 2.0 UV-35P 35 6.60 x 5.33 1600 15 30 1.7 e -13 FIL-UV50 50 7.87 f 2500 10 20 2.1 e -13 3.5 FIL-UV100 100 11.28 f 4500 5 10 2.9 e -13 5.9 14 / Plastic .09 .14 0.1 3.0 5 -10 ~ +60 - 20~ +70 24 / Plastic 15 / Plastic * The I or L suffix on the model number is indicative of the photodiode chip being isolated from the package by an additional pin connected to the case. The photodiode chips in FIL series are isolated in a low profile plastic package. The have a large field of view as well as in line pins. For mechanical drawings please refer to pages 57 thru 67. Typical Shunt Resistance vs Temp Normalized Shunt Resistance 0. 6 N o rm a lize d S h un t R e sis ta nc e Responsivity (A/W) R esp on sivity (A /W ) 0.6 T yNormalized pica l S hatu 23C n t Re sista n c e vs T e m p Typical Spectral Response Typical Spectral Respo nse 0.5 0. 5 0.4 0. 4 0.3 'Blue' Enhanced 'B Blue lu e' EEnhanced nhanced 0. 3 0.2 0. 2 'UV' Inversion Layer 'UUV V ' Inversion In ve rs io nLayer La y e r 0.1 0. 1 0 200 0 20 0 300 400 30 0 500 600 700 800 40 0Wavelength 50 0 60 0(nm)70 0 900 80 0 1000 90 0 1100 1 00 0 1 10 0 1E3 N orm a lized a t 2 3C 1E 3 1E2 1E 2 1E1 1E 1 1E0 1E 0 1E-1 1E -1 1E-2 1E -2 1E-3 1E -3 1E-4 -40 1E -4 -4 0 -20 -2 0 W a v e len gth (n m ) 0 0 20 40 Temperature (C) 20 40 60 60 80 80 100 10 0 T e m p e ra tu re ( C ) For MECHANICAL DRAWINGS Click Here UDT Sensors Inc. Phone: 310-978-0516 Fax: 310-644-1727 http:\\www.udt.com 2 PHOTODIODES TYPICAL ELECTRO-OPTICAL SPECIFICATIONS AT TA=23OC 930 nm 0V typ typ typ typ min typ typ max typ Storage 633 nm -55 ~ +80 0V 254 nm 50 W 0V 254 nm 254 nm Temp Range ( C) Rise Time (m s) -20 ~ +80 Reverse Voltage (V) -55 ~ +80 -10 mV NEP (W/O Hz) -20 ~ +80 Shunt Resistance (GW ) Operating 2 Capacitance (pF) -20 ~ +60 Responsivity (A/W) Dimension (mm) Peak Wavelength (nm) -20 ~ +60 Active Area Area (mm ) Model No. S -20 ~ +60 P -20 ~ +60 PLANAR DIFFUSED UV E Package Style UVE SERIES METAL PACKAGE UV-005E 5.7 2.4 sq 200 0.50 10 1.3 e -14 UV-013E 13 3.6 sq 400 0.40 5 1.8 e -14 UV-035E 34 5.8 sq 1000 0.20 1 4.1 e -14 0.80 200 0.50 10 1.3 e -15 0.15 1000 0.20 1 4.1 e -14 2500 0.10 0.50 5.8 e -14 1.00 100 0.30 4 2.0 e -14 0.10 225 0.20 2 2.8 e -14 550 0.10 0.50 5.6 e -14 0.40 100 0.30 4 2.0 e -14 0.10 550 0.10 0.5 5.6 e -14 1750 0.04 0.20 9.1 e -14 720 0.10 0.33 0.17 0.15 5 0.30 5 / TO-5 6 / TO-8 UVE SERIES CERAMIC PACKAGE UV-005EC 5.7 2.4 sq UV-035EC 34 5.8 sq UV-100EC 100 10 sq 720 0.10 0.33 0.17 5 0.80 24/Ceramic UVD SERIES METAL PACKAGE UV-005D 5.7 2.4 sq UV-013D 13 3.6 sq UV-035D 34 5.8 sq 970 0.10 0.33 0.50 5 0.20 5 / TO-5 6 / TO-8 UVD SERIES CERAMIC PACKAGE UV-005DC 5.7 2.4 sq UV-035DC 34 5.8 sq UV-100DC 100 10 sq 0.6 970 0.10 0.33 0.50 0. 5 0.4 U V D S e rie s 0. 4 0.3 UVE Series 0. 3 0.2 U V E S eries 0. 2 0.1 300 400 500 600 700 800 900 1000 1100 C ap a cita nc e (p F/m m ^2 ) R e sp o n sivity (A /W ) Responsivity (A/W) UVD Series Capacitance (pF/mm^2) Typical Spectral Response 0 200 24/Ceramic 1.00 Typical Capacitance vs Reverse Bias 30 30 20 UVE Series 20 U V E S eries 10 UVD Series 10 U VD S eries 0 0 1 Wavelength (nm) 0 20 0 0.20 Typical Capacitance vs Reverse Bias Typical Spectral Response 0. 6 0.5 0. 1 5 2 3 4 0 30 0 40 0 50 0 60 0 70 0 80 0 90 0 1 00 0 1 10 0 0 W ave le n gth (n m ) 1 2 3 4 R eve rse B ia s V o lta g e (V ) For MECHANICAL DRAWINGS Click Here 3 5 Reverse Bias Voltage (V) UDT Sensors Inc. Phone: 310-978-0516 Fax: 310-644-1727 http:\\www.udt.com 5