1 UDT Sensors Inc. Phone: 310-978-0516 Fax: 310-644-1727 http:\\www.udt.com
UV ENHANCED SERIES
INVERSION LAYERS AND PLANAR DIFFUSED SILICON PHOTODIODES
UDT Sensors offers two distinct families of UV enhanced silicon photodiodes.
Inversion channel series and planar diffused series. Both families of devices
are especially designed for low noise detection in the UV region of electromag-
netic spectrum.
Inversion layer structure UV enhanced photodiodes exhibit 100% internal quan-
tum efficiency and are well suited for low intensity light measurements. They
have high shunt resistance, low noise and high breakdown voltages. The re-
sponse uniformity across the surface and quantum efficiency improves with 5
to 10 volts applied reverse bias. In photovoltaic mode (unbiased), the capaci-
tance is higher than diffused devices but decreases rapidly with an applied
reverse bias. Photocurrent non-linearity sets in at lower photocurrents for in-
version layer devices compared to the diffused ones. They represent highly
stable responsivity under temperature changes up to 700 nm.
Planar diffused structure UV enhanced photodiodes show significant advan-
tages over inversion layer devices, such as lower capacitance and higher re-
sponse time. These devices exhibit linearity of photocurrent up to higher light
• Pollution Monitoring • Inversion series:
• Medical Instrumentation 100% Internal QE
• UV Exposure Meters • Ultra High RSH
• Spectroscopy • Planar Diffused Series:
• Water Purification IR Suppressed
• Fluorescence High Speed Response
High Stability
• Excellent UV response
APPLICATIONS FEATURES
input power compared to inversion layer devices.
They have relatively lower responsivities and quantum efficiencies compared
to inversion layer devices. There are two types of planar diffused UV en-
hanced photodiodes available: UVD and UVE. Both series have almost simi-
lar electro-optical characteristics, except in the UVE series, where the near IR
responses of the devices are suppressed. This is especially desirable if block-
ing the near IR region of the spectrum is necessary . UVD devices peak at 970
nm and UVE devices at 720 nm (see graph). Both series may be biased for
lower capacitance, faster response and wider dynamic range. Or they may be
operated in the photovoltaic (unbiased) mode for applications requiring low
drift with temperature variations. The UVE devices have a higher shunt resis-
tance than their counterparts of UVD devices, but have a higher capacitance.
These detectors are ideal for coupling to an OP-AMP in the current mode con-
figuration as shown below .
For further details, refer to the “Photodiode Characteristics” section of the catalog.
-
+
R
f
C
f
A
1
R
0
-
+
A
2
R
2
R
1
V
out
0.1µF
-15V
0.1µF
-15V
+15V
0.1µF
+15V
0.1µF
2
UDT Sensors Inc. Phone: 310-978-0516 Fax: 310-644-1727 http:\\www.udt.com
Active
Area Responsivity
(A/W) Capaci
-tance
(pF)
Shunt
Resistance
(MW)
NEP
(W/ÖHz) Rise
Time
(ms)
Operating
Current
(mA)
Temp
Range
(º C)
254 nm 0 V -10 mV 0V
254 nm
Reverse
Voltage
(V)
0 V
254 nm
50 W0 V
Model
No.
Area (mm2)
Dimension
(mm)
min typ typ min typ typ max typ max
Operating Storage
Package
Style ¶
UV ENHANCED SERIES, METAL PACKAGE
UV-001 0.8 1.0 f60 250 500 6.4 e -14 0.2
UV-005 5.1 2.54 f300 80 200 1.0 e -13 0.9
UV-015 15 3.05 x 3.81 800 30 100 1.4 e -13 2.0
5 / TO-5
UV-20 20 5.08 f1000 25 50 2.0 e -13 2.0
UV-35 35 6.60 x 5.33 1600 20 30 1.7 e -13 3.0
-20 ~ +60 -55 ~ +80
6 / TO-8
UV-50 11 / BNC
UV-50L * 50
7.87 f2500 10 20 2.6 e -13 3.5 10 / LoProf
UV-100 11 / BNC
UV-100L 100 11.28 f
.09 .14
4500 5 10 4.5 e -13
5
5.9
0.1
-10 ~ +60 -20 ~ +70
10 / LoProf
UV ENHANCED SERIES, PLASTIC PACKAGE §
FIL-UV005 5.1 2.54 f300 50 100 9.2 e -14 0.9
FIL-UV20 20 5.08 f1000 20 50 1.3 e -13 2.0
14 / Plastic
UV-35P 35 6.60 x 5. 33 1600 15 30 1.7 e -13 3.0 24 / Plastic
FIL-UV50 50 7.87 f2500 10 20 2.1 e -13 3.5
FIL-UV100 100 11.28 f
.09 .14
4500 5 10 2.9 e -13
5
5.9
0.1 -10 ~ +60 - 20
~ +70
15 / Plastic
* The I or L suffix on the model number is indicative of the photodiode chip being isolated from the package by an additional pin connected to the case.
§ The photodiode chips in FIL series are isolated in a low profile plastic pack age. The have a large field of view as well as in line pins.
For mechanical drawings please refer to pages 57 thru 67.
0
0.1
0.2
0.3
0.4
0.5
0.6
Responsivity (A/W)
200 300 400 500 600 700 800 900 1000 1100
Wavelength (nm)
Typical Spectral Response
'Blue' Enhanced
'UV' Inversion Layer
1E-4
1E-3
1E-2
1E-1
1E0
1E1
1E2
1E3
Normalized Shunt Resistance
-40 -20 0 20 40 60 80 100
Temperature (ºC)
Typical Shunt Resistance vs Temp
Normalized at 23ºC
INVERSION LAYER UV ENHANCED PHOTODIODES TYPICAL ELECTRO-OPTICAL SPECIFICATIONS AT TA=23OC
Blue Enhanced
UV Inversion Layer
0
0.1
0.2
0.3
0.4
0.5
0.6
R esponsivity (A /W)
200 300 400 500 600 700 800 900 1000 1100
Wa v e len gth (n m)
Typical Sp ectr al Re sponse
'Blue' Enhanced
'U V ' In ve r s i o n L a ye r
1E-4
1E-3
1E-2
1E-1
1E0
1E1
1E2
1E3
No rm a lized Sh u n t Re sist an c e
-40-200 20406080100
Temperature (ºC)
Ty pical Sh u n t Re sista n ce vs Te mp
Norm a lized a t 2 3ºC
For MECHANICAL DRAWINGS Click Here
3 UDT Sensors Inc. Phone: 310-978-0516 Fax: 310-644-1727 http:\\www.udt.com
Active
Area Responsivity
(A/W) Capacitance
(pF) Shunt
Resistance
(GW)
NEP
(W/ÖHz) Rise
Time
(ms)
Temp
Range
(º C)
254
nm 633
nm 930
nm 0 V -10 mV 0V
254 nm
Reverse
Voltage
(V)
0 V
254 nm
50 W
Model
No.
Area (m m2)
Dimension
(mm)
Peak
Wavelength
(nm)
typ typ typ typ min typ typ max typ
Operating
Storage
Package
Style ¶
UVE SERIES METAL PACKAGE
UV-005E 5.7 2.4 sq 200 0.50 10 1.3 e -14 0.15
UV-013E 13 3.6 sq 400 0.40 5 1.8 e -14 0.30 5 / TO-5
UV-035E 34 5.8 sq 720 0.10 0.33 0.17 10 00 0.20 1 4.1 e -14
5
0.80
-20 ~ +60
-55 ~ +80
6 / TO-8
UVE SERIES CERAMIC PACKAGE
UV-005EC 5.7 2.4 sq 200 0.50 10 1.3 e -15 0.15
UV-035EC 34 5.8 sq 1000 0.20 1 4.1 e -14 0.80
UV-100EC 100 10 sq
720 0.10 0.33 0.17
2500 0.10 0.50 5.8 e -14
5
1.00
-20 ~ +60
-20 ~ +80
24/Ceramic
UVD SERIES METAL PACKAGE
UV-005D 5.7 2.4 sq 100 0.30 4 2. 0 e -14 0.10
UV-013D 13 3.6 sq 225 0.20 2 2.8 e -14 0.20 5 / TO-5
UV-035D 34 5.8 sq
970 0.10 0.33 0.50
550 0.10 0.50 5.6 e -14
5
0.40
-20 ~ +60
-55 ~ +80
6 / TO-8
UVD SERIES CERAMIC PACKAGE
UV-005DC 5.7 2.4 sq 100 0.30 4 2.0 e -14 0.10
UV-035DC 34 5.8 sq 550 0.10 0.5 5.6 e -14 0.20
UV-100DC 100 10 sq
970 0.10 0.33 0.50
1750 0.04 0.20 9.1 e -14
5
1.00
-20 ~ +60
-20 ~ +80
24/Ceramic
0
0.1
0.2
0.3
0.4
0.5
0.6
Responsivity (A/W)
200 300 400 500 600 700 800 900 1000 1100
Wavelength (nm)
Typical Spectral Response
UVD Series
UVE Series
0
10
20
30
Capacitance (pF/mm^2)
0 1 2 3 4 5
Reverse Bias Voltage (V)
Typical Capacitance vs Reverse Bias
UVE Series
UVD Series
P S
PLANAR DIFFUSED UV E PHOTODIODES TYPICAL ELECTRO-OPTICAL SPECIFICATIONS AT TA=23OC
0
0.1
0.2
0.3
0.4
0.5
0.6
Responsivity (A /W)
200 300 400 500 600 700 800 900 1000 1100
Wa vele n g th (n m )
T y pica l Sp ec tral R es po n se
UVD Series
UVE Series
0
10
20
30
Ca pacit a nce (pF /mm ^2)
012345
Reverse Bias Voltage (V)
Typical Capacitance vs Reverse Bias
UVE Series
UVD Series
For MECHANICAL DRAWINGS Click Here