TCLT10.. Series
Document Number 83515
Rev. 1.9, 03-Dec-04
Vishay Semiconductors
www.vishay.com
1
CE
AC
C
17295
V
D E
12
34
Pb
Pb-free
e3
Optocoupler, Phototransistor Output, SOP-4L, Long Mini-Flat
Package
Features
• SMD Low profile 4 lead package
• High Isolation 5000 VRMS
• CTR flexibility available see order information
• Special construction
• Extra low coupling capacitance
• Connected base
• DC input with transistor output
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E76222 System Code W, Double
Protection
• CSA (C-UL) 1577 Recognized File No. E- 76222 -
Double Protection
• BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN
60950 (BS 7002), Certificate number 7081 and
7402
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
• FIMKO (SETI): EN 60950, Certificate No. 11027
•NOTE:
See the Safety Standard Approval List "Agency
Table" for more detailed information.
Applications
• Switchmode power supplies
• Computer peripheral interface
• Microprocessor system interface
Description
The TCLT10.. Series consists of a phototransistor
optically coupled to a gallium arsenide infrared-emit-
ting diode in a 4-lead SOP4L package.
The elements are mounted on one leadframe provid-
ing a fixed distance between input and output for high-
est safety requirements.
Order Information
NOTE: Available only on tape and reel.
Part Remarks
TCLT1000 CTR 50 - 600 %, SMD-4
TCLT1002 CTR 63 - 125 %, SMD-4
TCLT1003 CTR 100 - 200 %, SMD-4
TCLT1005 CTR 50 - 150 %, SMD-4
TCLT1006 CTR 100 - 300 %, SMD-4
TCLT1007 CTR 80 - 160 %, SMD-4
TCLT1008 CTR 130 - 260 %, SMD-4
TCLT1009 CTR 200 - 400 %, SMD-4
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2
Document Number 83515
Rev. 1.9, 03-Dec-04
TCLT10.. Series
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Output
Coupler
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Output
Parameter Test condition Symbol Value Unit
Reverse voltage VR6V
Forward current IF60 mA
Forward surge current tp ≤ 10 µsI
FSM 1.5 A
Power dissipation Pdiss 100 mW
Junction temperature Tj125 °C
Parameter Test condition Symbol Value Unit
Collector emitter voltage VCEO 70 V
Emitter collector voltage VECO 7V
Collector current IC50 mA
Collector peak current tp/T = 0.5, tp ≤ 10 ms ICM 100 mA
Power dissipation Pdiss 150 mW
Junction temperature Tj125 °C
Parameter Test condition Symbol Value Unit
Isolation test voltage (RMS) VISO 5000 VRMS
Total power dissipation Ptot 250 mW
Operating ambient temperature
range
Tamb - 40 to + 100 °C
Storage temperature range Tstg - 40 to + 100 °C
Soldering temperature Tsld 240 °C
Parameter Test condition Symbol Min Typ. Max Unit
Forward voltage IF = ± 50 mA VF1.25 1.6 V
Junction capacitance VR = 0 V, f = 1 MHz Cj50 pF
Parameter Test condition Symbol Min Typ. Max Unit
Collector emitter voltage IC = 1 mA VCEO 70 V
Emitter collector voltage IE = 100 µAV
ECO 7V
Collector-emitter cut-off current VCE = 20 V, If = 0, E = 0 ICEO 10 100 nA
TCLT10.. Series
Document Number 83515
Rev. 1.9, 03-Dec-04
Vishay Semiconductors
www.vishay.com
3
Coupler
Current Transfer Ratio
Maximum Safety Ratings
(according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending) see figure 1
This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
Input
Output
Coupler
Parameter Test condition Symbol Min Ty p . Max Unit
Collector emitter saturation
voltage
IF = 10 mA, IC = 1 mA VCEsat 0.3 V
Cut-off frequency VCE = 5 V, IF = 10 mA,
RL = 100 Ω
fc110 kHz
Coupling capacitance f = 1 MHz Ck0.3 pF
Parameter Test condition Part Symbol Min Ty p. Max Unit
IC/IFVCE = 5 V, IF = 5 mA TCLT1000 CTR 50 600 %
VCE = 5 V, IF = 10 mA TCLT1002 CTR 63 125 %
TCLT1003 CTR 100 200 %
VCE = 5 V, IF = 1 mA TCLT1002 CTR 22 45 %
TCLT1003 CTR 34 70 %
TCLT1004 CTR 56 100 %
VCE = 5 V, IF = 5 mA TCLT1005 CTR 50 150 %
TCLT1006 CTR 100 300 %
TCLT1007 CTR 80 160 %
TCLT1008 CTR 130 260 %
TCLT1009 CTR 200 400 %
Parameter Test condition Symbol Min Ty p . Max Unit
Forward current IF130 mA
Parameter Test condition Symbol Min Ty p . Max Unit
Power dissipation Pdiss 265 mW
Parameter Test condition Symbol Min Ty p . Max Unit
Rated impulse voltage VIOTM 8kV
Safety temperature Tsi 150 °C
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4
Document Number 83515
Rev. 1.9, 03-Dec-04
TCLT10.. Series
Vishay Semiconductors
Insulation Rated Parameters
Parameter Test condition Symbol Min Typ. Max Unit
Partial discharge test voltage -
Routine test
100 %, ttest = 1 s Vpd 1.6 kV
Partial discharge test voltage -
Lot test (sample test)
tTr = 60 s, ttest = 10 s,
(see figure 2)
VIOTM 8kV
Vpd 1.3 kV
Insulation resistance VIO = 500 V RIO 1012 Ω
VIO = 500 V, Tamb = 100 °C RIO 1011 Ω
VIO = 500 V, Tamb = 150 °C
(construction test only)
RIO 109Ω
Figure 1. Derating diagram
0 25 50 75 125
0
50
100
150
200
300
P – Total Power Dissipation ( mW )
tot
T
si
– Safety Temperature ( °C )
150
94 9182
100
250 Phototransistor
Psi ( mW )
IR-Diode
Isi ( mA )
Figure 2. Test pulse diagram for sample test according to DIN EN
60747-5-2(VDE0884)/ DIN EN 60747-; IEC60747
t
13930
t
1
, t
2
= 1 to 10 s
t
3
, t
4
= 1 s
t
test
= 10 s
t
stres
= 12 s
V
IOTM
V
Pd
V
IOWM
V
IORM
0
t
1
t
test
t
Tr
= 60 s
t
stres
t
3
t
4
t
2
TCLT10.. Series
Document Number 83515
Rev. 1.9, 03-Dec-04
Vishay Semiconductors
www.vishay.com
5
Switching Characteristics
Parameter Test condition Symbol Min Ty p . Max Unit
Delay time VS = 5 V, IC = 2 mA, RL = 100 Ω
(see figure 3)
td3.0 µs
Rise time VS = 5 V, IC = 2 mA, RL = 100 Ω
(see figure 3)
tr3.0 µs
Turn-on time VS = 5 V, IC = 2 mA, RL = 100 Ω
(see figure 3)
ton 6.0 µs
Storage time VS = 5 V, IC = 2 mA, RL = 100 Ω
(see figure 3)
ts0.3 µs
Fall time VS = 5 V, IC = 2 mA, RL = 100 Ω
(see figure 3)
tf4.7 µs
Turn-off time VS = 5 V, IC = 2 mA, RL = 100 Ω
(see figure 3)
toff 5.0 µs
Turn-on time VS = 5 V, IF = 10 mA, RL = 1 kΩ
(see figure 4)
ton 9.0 µs
Turn-off time VS = 5 V, IF = 10 mA, RL = 1 kΩ
(see figure 4)
toff 10.0 µs
Figure 3. Test circuit, non-saturated operation
Figure 4. Test circuit, saturated operation
Channel I
Channel II
95 10804
R
G
= 50 W
t
p
t
p
= 50 Ps
T= 0.01
+ 5 V
I
F
0
50 W100 W
I
F
I
C
= 2 mA; adjusted through
input amplitude
Oscilloscope
R
L
= 1 MW
C
L
= 20 pF
Channel I
Channel II
95 10843
R
G
=50Ω
t
p
t
p
=50 s
T= 0.01
+5V
I
C
I
F
0
50 1k
I
F
=10mA
Oscilloscope
R
L
≥
C
L
20 pF
Ω
M1
≤
µ
Ω
Ω
Figure 5. Switching Times
t
p
t
t
0
0
10%
90%
100%
t
r
t
d
t
on
t
s
t
f
t
off
IF
IC
96 11698
t
p
pulse duration
t
d
delay time
t
r
rise time
t
on
(= t
d
+t
r
) turn-on time
t
s
storage time
t
f
fall time
t
off
(= t
s
+t
f
) turn-off time
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Document Number 83515
Rev. 1.9, 03-Dec-04
TCLT10.. Series
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Figure 6. Total Power Dissipation vs. Ambient Temperature
Figure 7. Forward Current vs. Forward Voltage
Figure 8. Relative Current Transfer Ratio vs. Ambient
Temperature
0
50
100
150
200
250
300
0 40 80 120
P –Total Power Dissipation ( mW)
T
amb
– Ambient Temperature( °C )
96 11700
tot
Coupled device
Phototransistor
IR-diode
0.1
1
10
100
1000
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
F
- Forward Voltage(V)
96 11862
F
I - Forward Current ( mA )
–25 0 25 50
0
0.5
1.0
1.5
2.0
CTR – Relative Current Transfer Ratio
rel
Tamb – Ambient Temperature ( °C )
95 11025
75
VCE
=5V
IF=5mA
Figure 9. Collector Dark Current vs. Ambient Temperature
Figure 10. Collector Current vs. Forward Current
Figure 11. Collector Current vs. Collector Emitter Voltage
0255075
1
10
100
1000
10000
I - Collector Dark Current,
CEO
T
amb
- Ambient Temperature ( °C)
100
95 11026
with open Base ( nA )
V
CE
=20V
I
F
=0
0.1 1 10
0.01
0.1
1
100
I – Collector Current ( mA )
C
I
F
– Forward Current ( mA )
100
95 11027
10
V
CE
=5V
0.1 1 10
0.1
1
10
100
VCE – Collector Emitter Voltage(V)
100
95 10985
I – Collector Current ( mA)
C
IF=50mA
5mA
2mA
1mA
20mA
10mA
TCLT10.. Series
Document Number 83515
Rev. 1.9, 03-Dec-04
Vishay Semiconductors
www.vishay.com
7
Figure 12. Collector Emitter Saturation Voltage vs. Collector
Current
Figure 13. Current Transfer Ratio vs. Forward Current
Figure 14. Turn on / off Time vs. Collector Current
110
0
0.2
0.4
0.6
0.8
1.0
V – Collector Emitter Saturation Voltage (V)
CEsat
IC– Collector Current ( mA )
100
CTR=50%
20%
10%
95 11028
0.1 1 10
1
10
100
1000
CTR – Current Transfer Ratio ( % )
IF– Forward Current ( mA )
100
95 11029
VCE
=5V
02 4 6
0
2
4
6
8
10
IC– Collector Current ( mA )
10
95 11030
t / t –Turn on / Turn off Time ( s )
off
µ
on
Non Saturated
Operation
VS=5V
RL=100 Ω
toff
ton
Figure 15. Turn on / off Time vs. Forward Current
0 5 10 15
0
10
20
30
40
50
IF– Forward Current ( mA )
20
95 11031
t / t –Turn on / Turn off Time ( s )
off
µ
on
Saturated Operation
VS=5V
RL=1k Ω
toff
ton
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Document Number 83515
Rev. 1.9, 03-Dec-04
TCLT10.. Series
Vishay Semiconductors
Package Dimensions in mm
15243
TCLT10.. Series
Document Number 83515
Rev. 1.9, 03-Dec-04
Vishay Semiconductors
www.vishay.com
9
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
